Sputtering Deposition Rate Calculator: Thin Film Growth Simulation

simulator advanced ~12 min
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R ≈ 2.8 nm/min — 28 nm film in 10 minutes

At 300 W with a sputter yield of 1.2 and 8 cm target-substrate distance, the deposition rate is approximately 2.8 nm/min. A 10-minute deposition produces a 28 nm thin film.

Formula

R = (Y × J × M) / (ρ × NA × A) — deposition rate
J = P / (V × A_target) — ion current density
λ_sputter = kT / (√2 × π × σ² × p)

Atoms in Flight

Magnetron sputtering ejects atoms from a target surface with energies of 5–30 eV — far above the 0.025 eV thermal energy at room temperature. These energetic atoms traverse the vacuum, potentially colliding with background argon gas, and condense on the substrate to form a thin film. The competition between ballistic and thermalized transport determines film microstructure, density, and properties.

Deposition Rate Physics

The deposition rate depends on the sputter yield (atoms ejected per ion), the ion flux (controlled by discharge power), and the geometric factor (inverse square of target-substrate distance). Increasing power increases the ion current proportionally, while the sputter yield is fixed by the ion energy and target material. This simulation calculates the rate from these fundamental parameters.

Pressure and Transport

Argon pressure controls the mean free path of sputtered atoms. At 0.5 Pa, the mean free path is a few centimeters — comparable to typical target-substrate distances. Below this pressure, atoms arrive ballistically with high energy, producing dense films. Above it, multiple collisions thermalize the atoms, reducing their energy and changing the film growth mode from dense to columnar.

Film Growth Visualization

The canvas shows sputtered atoms leaving the target, traversing the gas phase (with collisions shown at higher pressures), and building up a film on the substrate. The film thickness grows in real time, and the color intensity represents film density. Adjusting pressure and distance lets you visually explore the transition between ballistic and thermalized deposition regimes.

FAQ

What is sputtering?

Sputtering is a physical vapor deposition (PVD) process where energetic argon ions bombard a target material, ejecting atoms that travel through the vacuum and condense on a substrate as a thin film. It is the most widely used PVD method in semiconductor manufacturing, optical coatings, and hard coatings.

What is sputter yield?

Sputter yield is the average number of target atoms ejected per incident ion. It depends on ion energy, ion mass, target material, and crystal orientation. Typical yields for 500 eV Ar+ range from 0.5 (Ti) to 3.0 (Ag). Higher yield means faster deposition.

How does pressure affect film quality?

Lower pressure means longer mean free path for sputtered atoms, allowing them to reach the substrate with higher energy (ballistic transport). This produces denser, better-adhering films. Higher pressure thermalizes atoms, giving more conformal coverage but often columnar, porous microstructure.

What is the typical deposition rate for magnetron sputtering?

DC magnetron sputtering rates range from 1–50 nm/min depending on power, target material, and geometry. Metals like Cu and Al deposit fastest (10–50 nm/min at 500 W). Reactive sputtering of oxides and nitrides is typically 3–10× slower due to target poisoning.

Sources

Embed

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